Capabilities

We have two GENxplor molecular beam epitaxy (MBE) reactors, with an ultra-high vacuum (UHV) connection bridging them for heterogeneous materials. An ATC Series 2200 UHV magnetic sputtering system will be UHV connected to both MBEs in early 2021.

Our dual MBEs host a combined 22 high-purity source materials for growth of a diverse range of high quality materials. Both MBEs provide precise control of material composition, deposition thickness, material growth rate, and substrate temperature. The sputtering system will include 23 material options.

The III-V MBE features a BandiT band-edge temperature monitor for accuracy across a wide range of growth temperatures. The chalcogenide MBE features a Telemark 575 multi-pocket electron beam evaporator.

Capabilities

We have two GENxplor molecular beam epitaxy (MBE) reactors, with an ultra-high vacuum (UHV) connection bridging them for heterogeneous materials. A magnetic sputtering system will be UHV connected to both MBEs in early 2021.

Our dual MBEs host a combined 17 high-purity source materials for growth of a diverse range of high quality materials. Both systems provide precise control of material composition, deposition thickness, material growth rate, and substrate temperature. The III-V MBE features BandiT band-edge thermometry for accuracy across a wide range of growth temperatures.

Molecular beam epitaxy reactors (MBE)

MBE involves the thermal evaporation or sublimation of ultra high-purity elements in a UHV chamber. Source temperatures control beam fluxes (thus growth rate) and high speed shutters control alloy combinations (e.g. GaAs, Be-doped AlGaAs, Bi2Se3, etc.). Atomic/molecular beams are incident on a heated crystalline substrate where material growth occurs, with atomically precise control of material composition and interface abruptness.

To maximize sample quality and purity, both MBEs include intro chamber out-gassing of substrates at 200 °C for 12 hours, ionization pumps and a cryogenic pump, and source material up to 7N5 (99.999995%) purity.

UD Nanofabrication Facility

Our III-V MBE (Apollo) features

  • Standard III-V source materials (gallium, indium, aluminum, arsenic, antimony)
  • Electronic doping sources (beryllium, tellurium, high-flux silicon)
  • Bismuth and two rare earth sources (erbium, terbium)
  • BandiT band-edge thermometry and thermocouple feedback for precise control of substrate temperature
  • Atomic hydrogen beam cleaning
  • Substrate heating up to 1200 °C (sample rotation up to 60 rpm)
  • Sample size: small pieces to 3″ wafers
  • In-situ monitoring: pyrometry, RHEED, RGA (to 100 AMU), chamber and BFM ionization gauges
  • Load lock sample out-gassing (200 °C)
  • Recipe driven

Our chalcogenide MBE (Artemis) features

  • Topological insulators source materials (bismuth, indium, antimony, selenium, tellurium)
  • Electron beam evaporator for high-temperature materials (tungsten, molybdenum, tantalum, niobium, zirconium)
  • Low-flux gallium capping source
  • Substrate heating up to 1200 °C (sample rotation up to 60 rpm)
  • Sample size: small pieces to 3″ wafers
  • In-situ monitoring: RHEED, RGA (to 100 AMU), chamber and BFM ionization gauges
  • Load lock sample out-gassing (200 °C)
  • Recipe driven

Magnetic sputtering

Magnetic sputtering involves the ionization of a high-purity process gas that is magnetically accelerated into electrically-charged high-purity target materials. Target material atoms then sputter onto a heated substrate to form films, with high deposition rates and surface uniformity.

Our UHV magnetic sputtering system (Hephaestus) will feature:

  • A wide range of source targets (metallic, dielectric, and precious metal)
  • Three high-purity gas controllers (argon, nitrogen, oxygen)
  • Six magnetrons (three with high strength fields for magnetic target materials)
  • Off-axis capability for one magnetron (for deposition of MgO based magnetic tunnel junctions)
  • High temperature substrate heater
UD Nanofabrication Facility

Contact Us

If you need further assistance or are have a specific request, please fill out the form below and we will get back to you shortly.